any changing of specification will not be informed individual S9013 npn silicon general purpose transistor power dissipation p cm : 0.3 w collector current i cm : 0.5 a collector-base voltage features collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente parameter symbol test conditions min typ max unit collector- base breakdown voltage v (br)cbo ic= 100 0 a i e =0 40 v collector-emi tter breakdown voltage v (br)ceo ic= 0.1ma i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 0 a i c =0 5 v collector cut- off current i cbo v cb =40 v , i e =0 0.1 0 a collector cut- off current i ceo v ce =20v , i b =0 0.1 0 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 0 a h fe(1) v ce =1v, i c = 50ma 120 350 dc current gain h fe(2) v ce =1v, i c =500ma 40 collector- emitter saturation voltage v ce (sat) i c =500 ma, i b = 50ma 0.6 v base- emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma f= 30mhz 150 mhz classification of h fe(1) y $ u $ >?=:?== $ ?==:@b= $ 1 2 e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m p . = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d ) v ( b r ) c b o : 4 0 v o p e r a t i n g & s t o r a g e j u n c t i o n t e m p e r a t u r e t j , t s t g : - 5 5 o c ~ + 1 5 0 o c 3 0 1 - j u n - 2 0 0 5 rev.b page 1 of 1 rohs compliant product a suffix of "-c" specifies halogen & lead-free
|
